Be diffusion in InGaAs/InP heterostructures grown by gas source molecular beam epitaxy

We report results of an investigation of Be diffusion from an In0.53Ga0.47A s layer with Be doping level of 3 x 10(19) cm(-3), sandwiched between undop ed InP layers. The InP/In0.53Ca0.47As/InP heterostructures, grown by gas so urce molecular beam epitaxy were subjected to 10-240s halogen lamp rapid th ermal annealing of 700-900 degreesC. The observed Be depth profiles, obtain ed by the secondary ion mass spectrometry (SIMS) technique, could be explai ned by a kick-out diffusion involving neutral Be interstitial species in In GaAs and singly ionized Be interstitial species in InP, (C) 2000 Elsevier S cience B.V. All rights reserved.