Growth behavior of GaAs/AlGaAs multi-layers grown on U-grooved GaAs fusionlayer on InP substrate

The growth behavior of GaAs/AlGaAs epilayers grown on U-shape patterned fus ion GaAs(1 0 0) layer on InP substrate has been investigated. The wet etche d side-plane of the U-shape pattern of the GaAs fusion layer was (2 1 1)A a nd (I I 1)B, for stripes aligned along [0(1) over bar 1] and [0 1 1] direct ions, respectively, whereas (1 1 1)A plane is preferred for both cases in n ormal GaAs substrates. The evolution of U-shape pattern sidewall from (2 1 1)A to (4 3 3)A for [0(1) over bar 1] direction and from (111)B to (411)B f or CO 111 direction was revealed as the growth of GaAs/AlGaAs multi-layers proceeded. The abnormal sidewall facets were considered to be closely relat ed with the fused layers and the enhancement of the lateral growth rate was a major factor to form high-quality epitaxial layers grown on the patterne d GaAs fusion layer on InP substrate. These results will be eventually impl emented for the fabrication of quantum structures such as quantum wires and dots formed on patterned fusion layers. (C) 2000 Elsevier Science B.V. All rights reserved.