Liquid-phase epitaxy on 6H-SiC Acheson seed crystals in closed vessel

SiC epitaxial growth was carried out on 6H-SiC Acheson seed crystals in liq uid phase using a closed carbon crucible. The growth was carried out in the temperature range of 1500-1700 degreesC. The geometrical configurations of seed crystals inside the crucible were specific, such that epitaxial layer growth occurred simultaneously on both faces of the same seed crystal unde r the same growth conditions. Growth rates as high as 20-30 mum/h have been achieved. The growth rate and surface morphologies observed after the grow th indicated that the temperature gradient on the seed crystal faces plays a dominant role for the growth mechanism of the epitaxial layers. The conve ction within the solvent caused by the temperature gradient enhances the ma ss transport to the growing layer faces enhancing the growth rate and also results in a better surface morphology of the epitaxial grown layers. (C) 2 000 Elsevier Science B.V. All rights reserved.