Growth of highly (100)-oriented Zr-rich PZT thin films on Pt/Ti/SiO2/Si substrates by a simple sol-gel process

Zr-rich lead zirconate titanate thin films with highly preferential (1 0 0) orientation, PZT80/20 and PZT85/15, and randomly oriented PZT70/30 thin fi lms have been successfully prepared on (1 1 1)Pt-coated Si substrates using the sol-gel process with rapid thermal annealing (RTA) at 700 degreesC for 200 s. The results of X-ray diffraction, including rocking curve measureme nts, suggest that PZT80/20 and PZT85/15 have a single (1 0 0) orientation w ith the rocking curve FWHM of around 0.5 degrees. The dielectric properties of each film have been measured as well. The results show that highly (1 0 0)-oriented PZT85/15 films exhibit higher remnant polarization (2P(r) = 41 .4 mu /cm(2)) and higher coercive field (2E(c) = 111 kV/cm) than randomly o riented PZT70/30 films (2P(r) = 33.4 muC/cm(2) and 2E(c) = 106 kV/cm, respe ctively). (C) 2000 Published by Elsevier Science B.V.