Electrical modelling of Si/SiO2 superlattices

The current-voltage characteristics of Si/SiO2 superlattices are numericall y computed as a function of a number of physical parameters such as the num ber of Si wells, the Si and SiO2 film thickness, the temperature, etc. It i s assumed that the Si layers form two-dimensional systems, communicating to one another through tunnel SiO2 barriers, without quantum coherence betwee n one Si well and its next nearest neighbours. From the numerical results, we derive a number of simple conclusions regarding the optimization of such confined structures, in view of maximizing their electroluminescence effic iency.