Xf. Chen et al., Effect of n(-)-layer thickness on green-light-emitting efficiency in nitrogen-doped GaP grown by liquid phase epitaxy, J PHYS D, 33(21), 2000, pp. 2703-2707
By comparing the photoluminescence intensity of a p-type crystal with that
of a n-type crystal, we find that the p-side is the main light-emitting reg
ion in the double-n structure nitrogen-doped GaP (GaP:N) material grown by
liquid phase epitaxy (LPE). From this experimental result, we have created
a simple theory regarding the minority-carrier-current distribution in the
lower donor concentration layer in the double n-structure GaP:N material. T
he theory describes that the interface of the lower, n(-), and the higher,
n(+), donor concentration LPE n-layers has a reflection effect on the holes
diffusing from p- to n-type crystal. When we decrease the thickness of the
n(-)-layer and the majority-carrier concentration ratio of the n(-)- and n
(+)-layers, the electron injection efficiency increases and the photolumine
scence is correspondingly enhanced.