Nbh. Van Hoornick et al., Recovery of tungsten from the exhaust of a tungsten chemical vapor deposition tool, J ELCHEM SO, 147(12), 2000, pp. 4665-4670
An ETC DryScrub plasma scrubber has been successfully tested fur the captur
ing and recovery of metallic tungsten from the exhaust of a W chemical vapo
r deposition (CVD) tool. The scrubber operation was completely transparent
to, the upstream CVD process. The WF6 destruction removal efficiency of the
scrubber was determined with a quadrupole mass spectrometer. The system ha
d been tested with two different plasma frequencies: 100 and 40 kHz. With t
he 100 kHz frequency, the destruction efficiency of WF6, reached an initial
value of 98% at a nominal dissipated power of 1200 W. However, the layer o
f W deposited on the scrubber electrodes contained hydrates of tungsten oxi
des. Moreover the destruction efficiency of WF6, dropped to less than 70% a
fter eight consecutively processed wafers ("memory effect"). introducing an
intermediate H-2 plasma treatment ensured a continuously high efficiency,
and improved significantly the purity of the deposited W layer in the scrub
ber. With the 40 kHz power supply, the maximum efficiency reached is more t
han 99% from a nominal dissipated power of 1100 W on. The purity of the dep
osited W layer is high (>99%). No memory effect was observed. Successful ma
rathon runs have been performed with each tested frequency. (C) 2000 The El
ectrochemical Society. S0013-4651(99)12-050-0. All rights reserved.