Effect of steric hinderance on junction properties of poly(3-alkylthiophene)s based Schottky diodes

Schottky diodes have been constructed from poly(3-cyclohexylthiophene) (P3c HT) and poly(3-n-hexylthiophene), and metals, such as, In, Ag, Al, Sn, etc. The polymers were synthesised chemically using ferric chloride as catalyst . The electrical properties of the devices have been studied by current-vol tage (I-V) and capacitance-voltage (C-V) measurements. Junction parameters such as ideality factor (n) and barrier height (chi) have been calculated o n the basis of thermoionic emission theory. Better performance of P3cHT/met al diode, compared to P3nHT was attributed to the steric effects produced b y cyclohexyl unit present in the polymer.