PHENOMENOLOGICAL MODEL OF ION IRRADIATION EFFECTS ON THE POSSIBILITIES OF DIAMOND NUCLEATION ENHANCEMENT

Citation
M. Ibncharaa et al., PHENOMENOLOGICAL MODEL OF ION IRRADIATION EFFECTS ON THE POSSIBILITIES OF DIAMOND NUCLEATION ENHANCEMENT, Surface & coatings technology, 92(1-2), 1997, pp. 1-6
Citations number
23
Categorie Soggetti
Materials Science, Coatings & Films
ISSN journal
02578972
Volume
92
Issue
1-2
Year of publication
1997
Pages
1 - 6
Database
ISI
SICI code
0257-8972(1997)92:1-2<1:PMOIIE>2.0.ZU;2-U
Abstract
The possibilities of diamond nucleation enhancement during a PVD proce ss involving simultaneous carbon deposition and ion irradiation are in vestigated via a phenomenological model including processes of carbon adsorption, sputtering and formation of activated sites of nucleation. The kinetics of the development of the surface topography is studied on the basis of the stochastic-nature processes of sputtering and depo sition. It is shown that in the case of high deposition and low sputte ring rates the maximum of the distribution of activated atoms is locat ed on the sides of the surface microstructures, During irradiation by high-energy heavy ions, where sputtering prevails, the deposition of a ctivated carbon atoms is found to be maximum on the top of microstruct ures. The theoretical conclusions are in qualitative agreement with CV D experimental ones, showing that diamond nucleation preferentially oc curs on the edges of surface topography. (C) 1997 Elsevier Science S.A .