M. Ibncharaa et al., PHENOMENOLOGICAL MODEL OF ION IRRADIATION EFFECTS ON THE POSSIBILITIES OF DIAMOND NUCLEATION ENHANCEMENT, Surface & coatings technology, 92(1-2), 1997, pp. 1-6
The possibilities of diamond nucleation enhancement during a PVD proce
ss involving simultaneous carbon deposition and ion irradiation are in
vestigated via a phenomenological model including processes of carbon
adsorption, sputtering and formation of activated sites of nucleation.
The kinetics of the development of the surface topography is studied
on the basis of the stochastic-nature processes of sputtering and depo
sition. It is shown that in the case of high deposition and low sputte
ring rates the maximum of the distribution of activated atoms is locat
ed on the sides of the surface microstructures, During irradiation by
high-energy heavy ions, where sputtering prevails, the deposition of a
ctivated carbon atoms is found to be maximum on the top of microstruct
ures. The theoretical conclusions are in qualitative agreement with CV
D experimental ones, showing that diamond nucleation preferentially oc
curs on the edges of surface topography. (C) 1997 Elsevier Science S.A
.