Resonant Raman scattering in self-organized InAs/GaAs quantum dots

The exciton-phonon coupling in self-organized InAs/GaAs quantum dots (QDs) is investigated under resonant excitation of the ground-state transition. F irst- and second-order phonon sidebands of the TO (30.3 meV) and LO (33.2 m eV) modes of the strained InAs QDs as well as an interface (35.9 meV) mode are resolved. Huang-Rhys factors of 0.012, 0.026, and 0.006, respectively, indicate enhanced polar exciton-phonon coupling in such strained low-symmet ry QDs. Time-resolved measurements support the local character of the phono n modes. (C) 2000 American Institute of Physics. [S0003-6951(00)04448-X].