Substrate-site selective growth of aligned carbon nanotubes

Citation
Zj. Zhang et al., Substrate-site selective growth of aligned carbon nanotubes, APPL PHYS L, 77(23), 2000, pp. 3764-3766
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
23
Year of publication
2000
Pages
3764 - 3766
Database
ISI
SICI code
0003-6951(200012)77:23<3764:SSGOAC>2.0.ZU;2-C
Abstract
We report highly substrate-site selective growth of carbon nanotubes by che mical vapor deposition from precursors of ferrocene and xylene mixtures. Th e technique allows us to grow well-aligned multiwalled carbon nanotubes pre ferentially on the SiO2 regions of patterned SiO2/Si substrates prepared by conventional lithography. This eliminates the catalyst predeposition step in the fabrication process. This simple approach may also be applied to bui ld large-scale networks of organized nanotubes on planar substrates. (C) 20 00 American Institute of Physics. [S0003-6951(00)00350-8].