Perylene: A promising organic field-effect transistor material

Citation
Jh. Schon et al., Perylene: A promising organic field-effect transistor material, APPL PHYS L, 77(23), 2000, pp. 3776-3778
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
23
Year of publication
2000
Pages
3776 - 3778
Database
ISI
SICI code
0003-6951(200012)77:23<3776:PAPOFT>2.0.ZU;2-#
Abstract
Field-effect transistors based on single crystalline perylene have been pre pared and analyzed in the temperature range from 50 to 300 K. Room temperat ure electron mobilities as high as 5.5 cm(2)/V s have been achieved. In add ition, ambipolar device operation, i.e., n- and p-channel activity, is obse rved. The temperature dependence of the electron and hole mobilities is dis cussed in the limits of hopping and band-like transport mechanisms. (C) 200 0 American Institute of Physics. [S0003-6951(00)00749-X].