Field-effect transistors based on single crystalline perylene have been pre
pared and analyzed in the temperature range from 50 to 300 K. Room temperat
ure electron mobilities as high as 5.5 cm(2)/V s have been achieved. In add
ition, ambipolar device operation, i.e., n- and p-channel activity, is obse
rved. The temperature dependence of the electron and hole mobilities is dis
cussed in the limits of hopping and band-like transport mechanisms. (C) 200
0 American Institute of Physics. [S0003-6951(00)00749-X].