Defect processes during isothermal annealing of rapidly quenched Cu (from 1
000 degreesC) and isochronal annealing of quenched (from 1400 degreesC) and
deformed Ni (20% rolled at room temperature) have been investigated by res
idual resistivity and positron lifetime measurements, In Cu a transformatio
n of vacancy loops of the Frank type into loops of split Shockley partials
was concluded. In Ni the growth of ultrasmall stacking fault tetrahedra cou
ld be the dominating process in vacancy annealing.