Influence of growth conditions in the case of molecular-beam epitaxy on photoluminescence spectra of GaAs/InAs/GaAs heterostructures with quantum dots near their initiation threshold

Authors
Mokerov, VG Fedorov, YV Guk, AV Khabarov, YV Pak, KS Danilochkin, AV
Citation
Vg. Mokerov et al., Influence of growth conditions in the case of molecular-beam epitaxy on photoluminescence spectra of GaAs/InAs/GaAs heterostructures with quantum dots near their initiation threshold, DOKL PHYS, 45(10), 2000, pp. 512-514
Citations number
8
Categorie Soggetti
Physics
Journal title
DOKLADY PHYSICS
ISSN journal
10283358 → ACNP
Volume
45
Issue
10
Year of publication
2000
Pages
512 - 514
Database
ISI
SICI code
1028-3358(200010)45:10<512:IOGCIT>2.0.ZU;2-F