Transmission electron microscopy of NdNiO3 thin films on silicon substrates

Authors
Laffez, P Retoux, R Boullay, P Zaghrioui, M Lacorre, P van Tendeloo, G
Citation
P. Laffez et al., Transmission electron microscopy of NdNiO3 thin films on silicon substrates, EPJ-APPL PH, 12(1), 2000, pp. 55-60
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
ISSN journal
12860042 → ACNP
Volume
12
Issue
1
Year of publication
2000
Pages
55 - 60
Database
ISI
SICI code
1286-0042(200010)12:1<55:TEMONT>2.0.ZU;2-0
Abstract
The microstructure of NdNiO3 thin films deposited on Si (100) was been inve stigated by high resolution electron microscopy. Deposition at 250 degreesC and 600 degreesC and several annealing at high temperature under oxygen pr essure were performed. Depending on the deposition temperature and annealin g conditions, different texture and microstructure were observed. Relations hips between microstructure and transport properties are discussed. The dif ferences of grain boundaries are suggested to be responsible for the differ ence in transport properties of the films.