FinFET - A self-aligned double-gate MOSFET scalable to 20 nm

MOSFETs with gate length down to 17 nm are reported. To suppress the short channel effect, a novel self-aligned double-gate MOSFET, FinFET, is propose d, By using boron-doped Si0.4Ge0.6 as a gate material, the desired threshol d voltage was achieved for the ultrathin body device. The quasiplanar natur e of this new variant of the vertical double-gate MOSFETs can be fabricated relatively easily using the conventional planar MOSFET process technologie s.