Modeling of high current density trench gate MOSFET

Citation
Kgp. Dharmawardana et Gaj. Amaratunga, Modeling of high current density trench gate MOSFET, IEEE DEVICE, 47(12), 2000, pp. 2420-2428
Citations number
14
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
47
Issue
12
Year of publication
2000
Pages
2420 - 2428
Database
ISI
SICI code
0018-9383(200012)47:12<2420:MOHCDT>2.0.ZU;2-G
Abstract
This paper presents a semianalytical model developed for the ON state (V-G > V-T) Of trench gate MOSFETs. It incorporates a more realistic model for t he inversion channel region, taking the effects of doping variation, transv erse, and longitudinal electric fields including the surface scattering, in to consideration. Accurate modeling of the inversion channel region is of p aramount importance, especially in the case of low voltage power devices wh ere the inversion channel resistance is a significant portion of the overal l resistance. The carrier velocity saturation at high longitudinal electric fields is also taken into account in the formulation of the model. The pro posed model is supported by both numerical simulation results using MEDICI and experimental results, which are in good agreement with the results of t he model. This can be a useful tool in the design of optimum devices.