Dependence of defect formation in n-Si on the mass of ions and intensity of photo-excitation at low fluence ion implantation

Authors
Barabanenkov, MY Leonov, AV Mordkovich, VN Omel'yanovskaya, NM
Citation
My. Barabanenkov et al., Dependence of defect formation in n-Si on the mass of ions and intensity of photo-excitation at low fluence ion implantation, IAN FIZ, 64(4), 2000, pp. 721-725
Citations number
7
Categorie Soggetti
Physics
Journal title
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA
ISSN journal
03676765 → ACNP
Volume
64
Issue
4
Year of publication
2000
Pages
721 - 725
Database
ISI
SICI code
0367-6765(200004)64:4<721:DODFIN>2.0.ZU;2-U