PHONON-ASSISTED EXCITON FORMATION AND RELAXATION IN GAAS ALXGA1-XAS QUANTUM-WELLS/

Citation
M. Gulia et al., PHONON-ASSISTED EXCITON FORMATION AND RELAXATION IN GAAS ALXGA1-XAS QUANTUM-WELLS/, Physical review. B, Condensed matter, 55(24), 1997, pp. 16049-16052
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
55
Issue
24
Year of publication
1997
Pages
16049 - 16052
Database
ISI
SICI code
0163-1829(1997)55:24<16049:PEFARI>2.0.ZU;2-D
Abstract
A microscopic analysis of exciton formation and relaxation in photoexc ited quantum wells is presented. The theoretical approach is based on a Monte Carlo simulation of the coupled free-carrier and exciton dynam ics, and includes various mechanisms contributing to exciton formation and relaxation. Our investigation clarifies the ori,ain of excitonic luminescence in time-resolved experiments. In particular, we address t he problem of the relative efficiencies of exciton formation assisted by either LO phonons or acoustic phonons, respectively.