A simple model is presented that predicts the kinetics of tensile stress ev
olution during the deposition of thin films that grow by the Volmer-Weber m
echanism. The generation of a tensile stress was attributed to the impingem
ent and coalescence of growing islands, while concurrent stress relaxation
was assumed to occur via a microstructure-dependent diffusive mechanism. To
model the process of island coalescence, finite element methods were emplo
yed and yielded average tensile stresses more consistent with experimental
observations than those predicted using previously reported analytical mode
ls. A computer simulation was developed that models the process of film gro
wth as the continuous nucleation of isolated islands, which grow at a const
ant rate to impinge and coalesce to form a continuous polycrystalline film.
By incorporating the finite element results for stress generation and a mi
crostructure-dependent stress relaxation model, the simulation qualitativel
y reproduced the complex temperature-dependent trends observed from in situ
measurements of stress evolution during the deposition of Ag thin films. T
he agreement includes simulation of the decreasing stress relaxation rate o
bserved during deposition at increasing temperatures. (C) 2000 American Ins
titute of Physics. [S0021-8979(01)01501-8].