Carbon nitride thin films were deposited on iron buffer layers by pulsed la
ser deposition assisted with ion implantation. Two types of samples (A) and
(B) were prepared with and without iron layers. Several techniques were us
ed to study the properties of the samples. Scanning tunneling microscopy (S
TM) was used to observe the surface structures of the samples. The differen
ce in their surface morphologies was studied. The STM measurements also pro
vided the relation between tunneling current and bias voltage to study the
local density of states of the sample surface by calculating (dI/dV)/(I/V).
Three band edges were observed from the calculated curve. Measurements by
Raman and Fourier transform infrared (FTIR) spectra were carried out to stu
dy the electronic properties of the samples. The Raman spectra showed the p
resence of triply bonded carbon nitride bonds (C=N) in sample (A), while on
ly single bonds were observed in sample (B) by FTIR spectra. The mechanical
properties were studied by nanoindentation. Both hardness and bulk modulus
of the thin films were measured. (C) 2000 American Institute of Physics. [
S0021-8979(00)06124-7].