Diffusing species in the proton generation process in Si/SiO2/Si structures

In this article, a study of the proton generation in Si/separation by impla ntation of oxygen (SIMOX) SiO2/Si structures is reported. The interest was focused on the ability to create mobile charges in SIMOX oxides following a forming gas anneal composed of 92% of N-2 and 8% of H-2 at 700 degreesC. T he kinetics of the charge generation at 700 degreesC are presented for two SIMOX oxide thicknesses. A study of the influence of the forming gas pressu re is also reported. From both types of experiments, it was concluded that the charge generation mechanism is an interface controlled reaction and tha t molecular hydrogen H-2 or atomic hydrogen H are not the limiting diffusin g species in the charge generation. By varying the pressure of the forming gas atmosphere, it was shown that the charge generation is dependent on the square root of the forming gas pressure. From these results and other auth ors' work, a model is proposed in which the proton generation is a two-step process. (C) 2000 American Institute of Physics. [S0021-8979(00)05117-3].