Electrical conduction in epitaxial BeSeTe/Si

Epitaxial wide-band gap II-VI beryllium chalcogenide semiconductor films Be Te, BeSe, and BeSeTe were grown on arsenic-terminated silicon substrates. E lectrical characteristics of Schottky contacts to the films were measured. Current-temperature measurements at elevated temperatures showed conduction band offsets of 1.2 eV for the BeSe0.41Te0.59/As/Si and 1.3 eV for the BeS e/As/Si heterostructures. At room temperature, the current density through BeSe/Si and BeSe0.41Te0.59/Si films was mid-10(-9) A/cm(2) at 0.1 MV/cm, si milar to previously reported values for ZnS/Si, while BeTe/Si films had ord ers of magnitude higher current density possibly due to interfacial recombi nation. (C) 2000 American Institute of Physics. [S0021-8979(00)02524-X].