Laser-induced modification of carbon nitride thin films

The results of experiments on local pulsed ultraviolet laser annealing of c arbon nitride (CNx) thin films are reported. It is shown that laser radiati on can be used for efficient graphitization of CNx thin films. The degree o f local transformation of diamond-like sp(3) bonded CNx compound films into graphite-like ones is dependent upon the radiation energy density. It is a lso shown that the electron field emission properties of the thin films can be modified by the laser treatment. (C) 2000 American Institute of Physics . [S0021-8979(00)07324-2].