Doping of n-type 6H-SiC and 4H-SiC with defects created with a proton beam

Deep centers in n-type 4H-SiC and 6H-SiC irradiated with 8 MeV protons have been investigated by capacitance spectroscopy and electron paramagnetic re sonance (EPR). Samples were fabricated by sublimation epitaxy or commercial ly produced by CREE Inc. Research Triangle Park, NC. It is showed that irra diation of wide-band gap semiconductors may lead to an increase in the conc entration of uncompensated donors in an n-type material. The spectrum of de ep centers in both SiC polytypes is independent of the technology of materi al growth or type of charged particles. However, the parameters and behavio r of the radiation defects in 6H- and 4H-SiC are different. A conclusion ab out the possible nature of the irradiation induced centers is made on the b asis of annealing behavior and EPR data. The obtained results show that pro ton irradiation can be used in SiC device fabrication technology for produc ing local high-resistance regions in the semiconductor. (C) 2000 American I nstitute of Physics. [S0021-8979(00)06720-7].