Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors

We have verified the accuracy of free-charge determinations from Raman scat tering in doped semiconductors by comparing the results obtained from phono n-plasmon coupled-mode line-shape fits with the charge-density values extra cted from the analysis of the Shubnikov-de Haas oscillations. The experimen ts were carried out on n-InP layers, and conduction band nonparabolicity wa s included both in the Lindhard-Mermin model used to fit the Raman spectra and in the Shubnikov-de Haas analysis. We find a very good agreement betwee n Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the l ine-shape analysis is carried out using the Lindhard-Mermin model. (C) 2000 American Institute of Physics. [S0021-8979(00)02024-7].