Temperature dependent electrical resistivity in nanocrystalline gold filmsmade by advanced gas deposition

Citation
J. Ederth et al., Temperature dependent electrical resistivity in nanocrystalline gold filmsmade by advanced gas deposition, J APPL PHYS, 88(11), 2000, pp. 6578-6582
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
11
Year of publication
2000
Pages
6578 - 6582
Database
ISI
SICI code
0021-8979(200012)88:11<6578:TDERIN>2.0.ZU;2-I
Abstract
Nanocrystalline gold films were made by advanced gas deposition. The mean c rystallite diameter lay between similar to 10 and similar to 80 nm dependin g on substrate temperature during deposition and annealing post-treatment, as found by x-ray diffractometry and transmission electron microscopy. Temp erature dependent resistivity rho was measured in the 4< T<300 K range. The log rho versus log T relationship displayed a discontinuity at a temperatu re T-cr lying between 10 and 7.2 K depending on crystallite size. This can be understood as a result of rho being dominated by electron scattering aga inst phonons and grain boundaries above and below T-cr, respectively. (C) 2 000 American Institute of Physics. [S0021-8979(00)01324-4].