Magnetization switching of a magnetic wire with trilayer structure using giant magnetoresistance effect

Citation
K. Shigeto et al., Magnetization switching of a magnetic wire with trilayer structure using giant magnetoresistance effect, J APPL PHYS, 88(11), 2000, pp. 6636-6644
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
11
Year of publication
2000
Pages
6636 - 6644
Database
ISI
SICI code
0021-8979(200012)88:11<6636:MSOAMW>2.0.ZU;2-3
Abstract
The switching fields of magnetic wires with trilayer structure consisting o f NiFe/Cu/Co were investigated using giant magnetic resistance effect. The switching fields of both magnetic layers were observed to be inversely prop ortional to wire width (150-520 nm). We found that the magnetization of the NiFe layer switches under much lower applied field than in the case of sin gle layer structure by the assistance of the stray field from the magnetic charge of Co at the edge of the wire.. Attaching a pad at one end of the wi re causes drastic decrease of the switching field. We investigated pad shap e dependence of the switching field of the Co layer. For the sample with a square pad we measured the temperature dependence of the switching field be tween 5 and 300 K. The dependence at low temperatures between 5 and 50 K ca n be described by the model on thermally assisted magnetization reversal ov er a simple potential barrier. (C) 2000 American Institute of Physics. [S00 21-8979(00)03924-4].