Tunnel switch diode based an AlSb/GaSb heterojunctions

We report on tunnel switch diodes based on AlSb barriers and GaSb p-n junct ions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system. The characteristic "S" shaped curr ent-voltage curve was found to occur for structures with AlSb barriers less than 300 Angstrom thick. The switching voltage and current density exhibit ed less sensitivity to barrier and epilayer thickness than was predicted by the punch-through model. The results were correlated with drift diffusion simulations which have been modified to account for the presence of a tunne ling contact. (C) 2000 American Institute of Physics. [S0021-8979(00)06922- X].