Measurement of silicon surface recombination velocity using ultrafast pump-probe reflectivity in the near infrared

Authors
Sabbah, AJ Riffe, DM
Citation
Aj. Sabbah et Dm. Riffe, Measurement of silicon surface recombination velocity using ultrafast pump-probe reflectivity in the near infrared, J APPL PHYS, 88(11), 2000, pp. 6954-6956
Citations number
36
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
11
Year of publication
2000
Pages
6954 - 6956
Database
ISI
SICI code
0021-8979(200012)88:11<6954:MOSSRV>2.0.ZU;2-M
Abstract
We demonstrate that ultrafast pump-probe reflectivity measurements from bul k Si samples using a Ti:sapphire femtosecond oscillator (lambda = 800 nm) c an be used to measure the Si surface recombination velocity. The technique is sensitive to recombination velocities greater than similar to 10(4) cms( -1). (C) 2000 American Institute of Physics. [S0021-8979(00)05222-1].