Enhancement of magnetoresistance in manganite multilayers

Citation
A. Venimadhav et al., Enhancement of magnetoresistance in manganite multilayers, J PHYS D, 33(22), 2000, pp. 2921-2926
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
33
Issue
22
Year of publication
2000
Pages
2921 - 2926
Database
ISI
SICI code
0022-3727(20001121)33:22<2921:EOMIMM>2.0.ZU;2-J
Abstract
Manganite multilayers have been fabricated using La0.67Ca0.33MnO3 as the fe rromagnetic layer and Pr0.7Ca0.3MnO3 and Nd0.5Ca0.5MnO3 as the spacer layer s. All the multilayers were grown on LaAlO3 (100) by pulse laser deposition . An enhanced magnetoresistance (defined (R-H - R-0)/R-0) of more than 98% is observed in these multilayers. Also a low-held magnetoresistance of 41% at 5000 Oe is observed in these multilayer films. The enhanced magnetoresis tance is attributed to the induced double exchange in the spacer layer, whi ch gives rise to a greater number of conducting carriers. This is shown by replacing the spacer layer with LaMnO3 where Mn exists only in the 3+ state and no enhancement is observed in the La0.67Ca0.33MnO3/LaMnO3 multilayers as a double exchange mechanism cannot be induced by external magnetic field s.