Positron lifetime calculations for defects in Zn

Citation
Jm. Campillo et al., Positron lifetime calculations for defects in Zn, J PHYS-COND, 12(46), 2000, pp. 9715-9723
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
12
Issue
46
Year of publication
2000
Pages
9715 - 9723
Database
ISI
SICI code
0953-8984(20001120)12:46<9715:PLCFDI>2.0.ZU;2-5
Abstract
The effect of the lattice relaxation at vacancy clusters and interstitial-t ype dislocation loops on the lifetime of positrons in Zn has been studied. Defective relaxed structures have been generated for the lifetime calculati ons by using a many-body potential for Zn. From the results, it is inferred that the effect of the atomic relaxation is mainly significant for small v acancy clusters. The lifetime associated with interstitial-type loops is ve ry sensitive to the loop structure and its surroundings. Previous experimen tal results are compared with the theoretical calculations.