The formation of an electronic polaron is believed to be the limiting
mechanism for electron transport in sapphire (Al2O3). Measurements of
the spin depolarization of positive muons (mu(+)) implanted in a sapph
ire crystal in electric fields up to 100 kV/cm show that the muonium a
tom (Mu=mu(+)e(-)) is formed via transport to the mu(+) of a radiolysi
s electron created in the muon's track. At high temperature, electron
transport is consistent with a two-phonon mechanism of quantum diffusi
on, while at low temperature it is temperature independent due to a cr
ossover to a one-phonon mechanism.