QUANTUM TRANSPORT OF ELECTRONIC POLARONS IN SAPPHIRE

Citation
V. Storchak et al., QUANTUM TRANSPORT OF ELECTRONIC POLARONS IN SAPPHIRE, Physical review. B, Condensed matter, 56(1), 1997, pp. 55-58
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
56
Issue
1
Year of publication
1997
Pages
55 - 58
Database
ISI
SICI code
0163-1829(1997)56:1<55:QTOEPI>2.0.ZU;2-7
Abstract
The formation of an electronic polaron is believed to be the limiting mechanism for electron transport in sapphire (Al2O3). Measurements of the spin depolarization of positive muons (mu(+)) implanted in a sapph ire crystal in electric fields up to 100 kV/cm show that the muonium a tom (Mu=mu(+)e(-)) is formed via transport to the mu(+) of a radiolysi s electron created in the muon's track. At high temperature, electron transport is consistent with a two-phonon mechanism of quantum diffusi on, while at low temperature it is temperature independent due to a cr ossover to a one-phonon mechanism.