A DEPFET pixel Bioscope for the use in autoradiography

The DEPFET structure consists of a field effect transistor integrated on hi gh-resistivity silicon, which can be used as a radiation detector. Due to s everal features (e.g. very low noise at room temperature, information stora ge capability and a thin, homogeneous entrance window), the DEPFET concept is useful for various applications. In order to apply a DEPFET pixel detect or in autoradiography, 64 x 64 matrices with a pixel size of 50 mum x 50 mu m were built. Using several ASIC chips for the readout control and signal p rocessing, a complete sensor system allows a row-by-row detector readout wi th almost continuous sensitivity. First results on the device homogenity, t he quantum efficiency and the very promising noise performance are presente d. (C) 2000 Published by Elsevier Science B.V. All rights reserved.