InGaAsP/GaAs SCHSQW laser arrays grown by LPE

Authors
Bo, BX Gao, X Qu, Y Zhang, XD Gao, DS
Citation
Bx. Bo et al., InGaAsP/GaAs SCHSQW laser arrays grown by LPE, OPT LASER T, 32(5), 2000, pp. 335-338
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
OPTICS AND LASER TECHNOLOGY
ISSN journal
00303992 → ACNP
Volume
32
Issue
5
Year of publication
2000
Pages
335 - 338
Database
ISI
SICI code
0030-3992(200007)32:5<335:ISLAGB>2.0.ZU;2-G
Abstract
InGaAsP/InGaP/GaAs separate confinement heterostructure (SCH) single quantu m well (SQW) laser structures have been obtained by an improved liquid-phas e epitaxy (LPE) process. Wide-contact stripe lasers have been fabricated wi th threshold current density below 300 A/cm(2) and cavity length of 800 mum . Finally, with the same grown wafers, 1-cm bar laser diode (LD) arrays are made with 150 mum wide stripes and a maximum fill factor of 30%. Continuou s wave (CW) power output of 20 W has been reached. (C) 2000 Elsevier Scienc e Ltd. All rights reserved.