INPLANE AND OUT-OF-PLANE ANISOTROPIC MAGNETORESISTANCE IN NI80FE20 THIN-FILMS

Authors
RIJKS TGSM LENCZOWSKI SKJ COEHOORN R DEJONGE WJM
Citation
Tgsm. Rijks et al., INPLANE AND OUT-OF-PLANE ANISOTROPIC MAGNETORESISTANCE IN NI80FE20 THIN-FILMS, Physical review. B, Condensed matter, 56(1), 1997, pp. 362-366
Citations number
21
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
56
Issue
1
Year of publication
1997
Pages
362 - 366
Database
ISI
SICI code
0163-1829(1997)56:1<362:IAOAMI>2.0.ZU;2-#
Abstract
The anisotropic magnetoresistance (AMR) has been measured for Ni80Fe20 thin films, with the magnetization vector rotating in the film plane as well as out of the film plane. The out-of-plane (OF) AMR is found t o be considerably larger than the in-plane (IF) effect, and strongly d ependent on the degree of texture. In untextured films, the difference between the IP- and the OP-AMR is explained in terms of a dimensional ity effect, whereas in (111)-textured films an additional contribution to the OP-AMR is found.