Quantized states in Ga1-xInxN/GaN heterostructures and the model of polarized homogeneous quantum wells

Centers of spontaneous and stimulated light emission in Ga1-xInxN/GaN activ e layers as analyzed in luminescence and photoreflection spectroscopy are m odeled under the assumption of polarized laterally homogenous quantum wells . In perturbation to the band structure of wurtzite GaN including experimen tal polarization fields and band-gap bowing the spectrum of interband trans itions is calculated for 0<x<0.2. We. predict the first transition between quantized electron and hole states to lie close to a maximum in photoreflec tion and close to the energy of stimulated emission. The level of the main luminescence under low excitation cannot be described in this single-partic le picture. These results allow a quantitative treatment of that level, e.g . in models of lower dimensionality.