Dielectric properties of I-III-VI2-type chalcopyrite semiconductors

Dielectric properties of I-III-VI2-type ternary chalcopyrite semiconductors , including linear and second order nonlinear optical susceptibilities at 1 0.6 mum, have been quantitatively studied from the chemical bond viewpoint. Contributions from each type of constituent chemical bond, i.e., I - VI an d III - VI bonds, to the total linear and nonlinear optical properties of t hese compounds at 10.6 mum have been theoretically determined. The chemical bond method quantitatively expresses the trends in the dielectric properti es of these compounds, which is helpful for carrying out modeling of their properties.