Modulation of the luminescence spectra of InAs self-assembled quantum dotsby resonant tunneling through a quantum well

We investigate carrier dynamics in optically excited n-i-n GaAs/(AlGa)As re sonant tunneling diodes that incorporate a single layer of InAs quantum dot s in the center of the GaAs quantum well (QW). Voltage-tunable resonant cha nges in the dot luminescence are observed and are discussed in terms of the tunneling of carriers into the resonant states of the QW and of the captur e of carriers from the QW into the dots.