Negative differential resistance in nanotube devices

Authors
Leonard, F Tersoff, J
Citation
F. Leonard et J. Tersoff, Negative differential resistance in nanotube devices, PHYS REV L, 85(22), 2000, pp. 4767-4770
Citations number
17
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
85
Issue
22
Year of publication
2000
Pages
4767 - 4770
Database
ISI
SICI code
0031-9007(20001127)85:22<4767:NDRIND>2.0.ZU;2-4
Abstract
Carbon nanotube junctions are predicted to exhibit negative differential re sistance, with very high peak-to-valley current ratios even at room tempera ture. We treat both nanotube p-n junctions and undoped metal-nanotube-metal junctions, calculating quantum transport through the self-consistent poten tial within a tight-binding approximation. The undoped junctions in particu lar maybe suitable for device integration.