Influence of Sn resonance states on the electrical homogeneity of Bi2Te3 single crystals

Citation
Mk. Zhitinskaya et al., Influence of Sn resonance states on the electrical homogeneity of Bi2Te3 single crystals, SEMICONDUCT, 34(12), 2000, pp. 1363-1364
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
12
Year of publication
2000
Pages
1363 - 1364
Database
ISI
SICI code
1063-7826(2000)34:12<1363:IOSRSO>2.0.ZU;2-S
Abstract
An unusually high homogeneity of electrical properties was found in Sn-dope d Bi2Te3 single crystals. The Seebeck coefficient, which is sensitive to fl uctuations in charge carrier concentration, remains unchanged even when the amount of introduced Sn impurity is increased. This fact is explained in t erms of the model of resonance impurity states. (C) 2000 MAIK "Nauka/Interp eriodica".