The In/PbTe barrier structures with a thin intermediate insulating layer

Epitaxial n-PbTe layers were grown on BaF2 {111} single-crystal substrates by hot-wall epitaxy from the gaseous phase. These layers were kept in atmos pheric air for 15-30 days, after which In and protective BaF2 layers were d eposited. Current-voltage characteristics and photoelectric sensitivity spe ctra of the In/n-PbTe barrier structures were measured in the temperature r ange T = 80-300 K. Based on the experimental results, a model of charge tra nsport is suggested and the effective barrier height Phi (eff)(b), the insu lator layer thickness delta, and the surface-state density D-S are determin ed. (C) 2000 MAIK "Nauka/Interperiodica".