On the internal quantum efficiency and carrier ejection in InGaAsP/InP-based quantum-well lasers

The optimization of InGaAsP/InP quantum-well laser heterostructures that ha d various configurations and emitted in the wavelength range from 1.26 up t o 1.55 mum was carried out with the aim of maximizing the internal quantum efficiency and output optical power. It was experimentally shown that the h eterolasers based on the laser structure with a broadened three-step wavegu ide have the highest quantum efficiency of stimulated radiation. In heterol asers of the suggested configuration, a decrease in the electron ejection o ut of the active region into the waveguide was observed. The power of the o ptical radiation of 4.2 W in a continuous-wave lasing mode was obtained in laser diodes with a mesa-stripe width of 100 mum. The quantum efficiency wa s 85% for the internal optical losses of 3.6 cm(-1). (C) 2000 MAIK "Nauka/I nterperiodica".