Non-destructive extraction of technological parameters for numerical simulation of conventional planar punch-through IGBT

Two dimensional (2D) physics-based simulation of power semiconductor device s provides valuable information about the dynamic mechanisms within the dev ices, thus improving the understanding of device performance in various app lications. Numerical simulation requires several technological parameters s uch as doping, dimensions of various regions and carrier lifetime. Destruct ive methods are available, but they are quite expensive and require sophist icated equipment. This article describes an original non-destructive techno logical parameter extraction methodology for conventional planar punch-thro ugh (PT) insulated gate bipolar transistor (IGBT) based on simple electrica l measurements to obtain an equivalent physics-based model of the real devi ce. To verify the accuracy of these extracted parameters, a 2D PT-IGBT stru cture is implemented in a physics-based finite element simulator. A good ma tch between simulated and experimental results validates this methodology. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.