S. Azzopardi et al., Non-destructive extraction of technological parameters for numerical simulation of conventional planar punch-through IGBT, SOL ST ELEC, 44(11), 2000, pp. 1899-1908
Two dimensional (2D) physics-based simulation of power semiconductor device
s provides valuable information about the dynamic mechanisms within the dev
ices, thus improving the understanding of device performance in various app
lications. Numerical simulation requires several technological parameters s
uch as doping, dimensions of various regions and carrier lifetime. Destruct
ive methods are available, but they are quite expensive and require sophist
icated equipment. This article describes an original non-destructive techno
logical parameter extraction methodology for conventional planar punch-thro
ugh (PT) insulated gate bipolar transistor (IGBT) based on simple electrica
l measurements to obtain an equivalent physics-based model of the real devi
ce. To verify the accuracy of these extracted parameters, a 2D PT-IGBT stru
cture is implemented in a physics-based finite element simulator. A good ma
tch between simulated and experimental results validates this methodology.
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