Degree of degeneracy of quantized inversion layer in metal-oxide semiconduc
tor structure are investigated by a fully quantum mechanical approach via s
elf-consistent solution of Schrodinger and Poisson equations. The relative
error of carrier sheet density induced by Boltzmann statistics is used as a
measurement of the degeneracy. It is shown that the degree of degeneracy o
f inversion layer is much weaker due to the quantization of carrier energy
compared with the semi-classical one. (C) 2000 Elsevier Science Ltd. All ri
ghts reserved.