On the degeneracy of quantized inversion layer in MOS structures

Authors
Ma, YT Liu, LT Yu, ZP Li, ZJ
Citation
Yt. Ma et al., On the degeneracy of quantized inversion layer in MOS structures, SOL ST ELEC, 44(11), 2000, pp. 1925-1929
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
11
Year of publication
2000
Pages
1925 - 1929
Database
ISI
SICI code
0038-1101(200011)44:11<1925:OTDOQI>2.0.ZU;2-2
Abstract
Degree of degeneracy of quantized inversion layer in metal-oxide semiconduc tor structure are investigated by a fully quantum mechanical approach via s elf-consistent solution of Schrodinger and Poisson equations. The relative error of carrier sheet density induced by Boltzmann statistics is used as a measurement of the degeneracy. It is shown that the degree of degeneracy o f inversion layer is much weaker due to the quantization of carrier energy compared with the semi-classical one. (C) 2000 Elsevier Science Ltd. All ri ghts reserved.