A comparison of npn and pnp profile design tradeoffs for complementary SiGeHBT Technology

Authors
Zhang, G Cressler, JD Niu, GF Pinto, A
Citation
G. Zhang et al., A comparison of npn and pnp profile design tradeoffs for complementary SiGeHBT Technology, SOL ST ELEC, 44(11), 2000, pp. 1949-1954
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
11
Year of publication
2000
Pages
1949 - 1954
Database
ISI
SICI code
0038-1101(200011)44:11<1949:ACONAP>2.0.ZU;2-7
Abstract
A comprehensive comparison of npn and pnp profile design tradeoffs for SiGe HBTs is conducted using calibrated simulations. The parasitic energy band barrier induced by the SiCe/Si transition in the collector-base space charg e region produces very different design constraints for pnp and npn transis tors, and they must be optimized separately. A single SiGe profile is found to give acceptable performance for both npn and pnp devices, while still s atisfying film stability constraints. (C) 2000 Published by Elsevier Scienc e Ltd. All rights reserved.