An improved substrate current model for deep submicron MOSFETs

Authors
Li, W Yuan, JS Chetlur, S Zhou, J Oates, AS
Citation
W. Li et al., An improved substrate current model for deep submicron MOSFETs, SOL ST ELEC, 44(11), 2000, pp. 1985-1988
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
11
Year of publication
2000
Pages
1985 - 1988
Database
ISI
SICI code
0038-1101(200011)44:11<1985:AISCMF>2.0.ZU;2-S
Abstract
An improved substrate current model for deep submicron MOSFETs, suitable fo r circuit aging simulation, is developed. The present model predictions are compared with experimental data and the BSIM3V3 model. A good agreement be tween the present model predictions and experimental data is obtained. (C) 2000 Elsevier Science Ltd. All rights reserved.