The influence of different isolation processes on the performance of AlGaAs/GaAs heterojunction bipolar transistors for power applications

Authors
Yan, BP Wang, H Pan, Y Ng, GI
Citation
Bp. Yan et al., The influence of different isolation processes on the performance of AlGaAs/GaAs heterojunction bipolar transistors for power applications, SOL ST ELEC, 44(11), 2000, pp. 1989-1995
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
11
Year of publication
2000
Pages
1989 - 1995
Database
ISI
SICI code
0038-1101(200011)44:11<1989:TIODIP>2.0.ZU;2-H
Abstract
AlGaAs/GaAs heterojunction bipolar transistors have been fabricated by two kinds of different isolation approaches, proton implantation isolation and micro-airbridge technique, respectively. A detail comparison of the device performances is presented in the maximum collector current, the knee voltag e, the maximum output power and the power-added efficiency. The differences of their DC and power performances are discussed and analyzed. (C) 2000 El sevier Science Ltd. All rights reserved.