An empirical model for leakage current in poly-silicon thin film transistor

The electric fields present in drain depletion region of poly-silicon thin film transistors (poly-Si TFTs) result in the enhancement of emission rate from the traps. An empirical relation between the field enhanced emission r ate and electric field is proposed, which can be used to model the leakage current of poly-Si TFTs as a function of gate bias and temperature. The lea kage current shows good agreement with the experimental data over wide rang e of temperature and gate bias. The model can be useful for circuit simulat ion. (C) 2000 Elsevier Science Ltd. All rights reserved.