Direct tunneling relaxation spectroscopy in ultra-thin gate oxide MOS structures

For the first time, a difference analysis method has been applied to separa te and characterize interface and oxide traps generated in an ultra-thin di rect tunneling (DT) gate oxide. It provides a useful tool to study the mech anism of degradation in ultra-thin MOSFET and extract parameters of interfa ce trap and oxide trap, such as the generation/capture cross-section, centr oid and density when a large DT is injected through the gate oxide. This me thod is an extension of oxide trap relaxation spectroscopy (OTRS) technique . It has the advantage of being direct, fast and convenient in the study of MOSFET reliability. (C) 2000 Elsevier Science Ltd. All rights reserved.